IPB04N03L |
RFQ for IPB04N03L Required Field |
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| Technical/Catalog Information | IPB04N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 55A, 10V |
| Input Capacitance (Ciss) @ Vds | 3877pF @ 15V |
| Power - Max | 107W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 32nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPB04N03LA IPB04N03LA IPB04N03LAINTR ND IPB04N03LAINTRND IPB04N03LAINTR |
| Product | Manufacturers | Pack | D/C |
| IPB04N03L | - | TO263/3 | 01+ |
Typical Application |
Features |
| · The information herein is given to describe certain components and shall not be considered as warranted characteristics.· Terms of delivery and rights to technical change reserved.· We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.· Infineon Technologies is an approved CECC manufacturer. | · N-Channel· Logic Level· Excellent Gate Charge x RDS(on) product (FOM)· Superior thermal resistance· 175°C operating temperature· Avalanche rated· dv/dt rated· Ideal for fast switching buck converter |
Continuous drain current1) TC=25°C1) ID ............................80 A
Pulsed drain current TC=25°C IDpuls .....................................320
Avalanche energy, single pulse
ID=55A, VDD=25V, RGS=25 EAS .......................................60 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR .............18
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt ...6 kV/µs
Gate source voltage VGS ...................................................±20 V
Power dissipation TC=25°C Ptot ......................................188 W
Operating and storage temperature Tj , Tstg ......-55 to +175 °C
IEC climatic category; DIN IEC 68-1 ...........................55/175/56
1. Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2. Defined by design. Not subject to production test.
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| IPB04N03L | TO263/3 | |
| IPB04N03LA | TO-263 | |
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